Display apparatus

ABSTRACT

A display apparatus includes: a thin-film transistor including a source electrode, a drain electrode, and a gate electrode; a data line in a layer different from the source electrode, the drain electrode, and the gate electrode, wherein the data line is configured to transmit a data signal; and a shield layer between the data line and a component of the thin-film transistor.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/838,138, filed Dec. 11, 2017, which is a continuation of U.S. patentapplication Ser. No. 14/660,813, filed Mar. 17, 2015, now U.S. Pat. No.9,842,892, which claims priority to and the benefit of Korean PatentApplication No. 10-2014-0100700, filed Aug. 5, 2014, the entire contentof all of which is incorporated herein by reference.

BACKGROUND 1. Field

Embodiments of the present invention relate to a display apparatus.

2. Description of the Related Art

In an organic light-emitting display apparatus, thin-film transistors(TFTs) may be located in each (sub) pixel to control the luminance ofeach (sub) pixel. Such TFTs control the luminance of the sub (pixel)according to a received data signal.

However, luminance realized in a (sub) pixel of a general displayapparatus may be different from that depending on a received datasignal. Accordingly, an image displayed on the general display apparatusmay have deteriorated quality.

SUMMARY

One or more embodiments of the present invention include a displayapparatus for preventing quality deterioration of a displayed image.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to some embodiments of the present invention, a displayapparatus includes: a thin-film transistor including a source electrode,a drain electrode, and a gate electrode; a data line in a layerdifferent from the source electrode, the drain electrode, and the gateelectrode, wherein the data line is configured to transmit a datasignal; and a shield layer between the data line and a component of thethin-film transistor.

The shield layer may be between at least one of the source electrode andthe data line, the drain electrode and the data line, or the gateelectrode and the data line.

The display apparatus may further include a storage capacitor includinga first storage capacitor plate and a second storage capacitor plate,the second storage capacitor plate overlapping the first storagecapacitor plate and being above the first storage capacitor plate, thedata line may be in a layer above the second storage capacitor plate,the second storage capacitor plate may include the shield layer, and theshield layer may extend between the gate electrode and the data line orextends below the data line.

The first storage capacitor plate may be electrically coupled to thegate electrode.

The first storage capacitor plate and the gate electrode may beintegrally formed.

The gate electrode may include a first gate electrode and a second gateelectrode, the shield layer may be between the data line and thecomponent, and the component may be between the first gate electrode andthe second gate electrode of the thin-film transistor.

The display apparatus may further include a storage capacitor includinga first storage capacitor plate and a second storage capacitor plate,the second storage capacitor plate overlapping the first storagecapacitor plate and being above the first storage capacitor plate, thedata line may be in a layer above the second storage capacitor plate,and the second storage capacitor plate may include the shield layer andextend at least one of between the data line and the component, betweenthe first gate electrode and the second gate electrode of the thin-filmtransistor, or below the data line.

The display apparatus may further include a driving thin-film transistorincluding a driving gate electrode electrically coupled to the firststorage capacitor plate and a driving drain electrode electricallycoupled to the source electrode, and the first storage capacitor platemay be electrically coupled to the drain electrode.

The display apparatus may further include: a storage capacitor includinga first storage capacitor plate and a second storage capacitor plate,the second capacitor plate overlapping the first storage capacitor plateand being above the first storage capacitor plate; and an initializationvoltage line configured to transmit an initialization voltage to adriving gate electrode electrically coupled to the first storagecapacitor plate of a driving thin-film transistor, the initializationvoltage line may be in a same layer as the second storage capacitorplate, the drain electrode may be electrically coupled to the firststorage capacitor plate and the source electrode may be electricallycoupled to the initialization voltage line, the data line may be in alayer above the second storage capacitor plate, and the shield layer maybe integrated with the initialization voltage line and may extend atleast one of between the data line and the component, above thecomponent between the first gate electrode and the second gate electrodeof the thin-film transistor, or below the data line.

According to some embodiments of the present invention, a displayapparatus includes: a thin-film transistor including a source electrode,a drain electrode, and a gate electrode; a data line in a layerdifferent from the source electrode, the drain electrode, and the gateelectrode, wherein the data line is configured to transmit a datasignal; a storage capacitor including: a first storage capacitor plateelectrically coupled to the drain electrode; and a second storagecapacitor plate in a layer different from the first storage capacitorplate, wherein the second storage capacitor plate overlaps the firststorage capacitor plate; and an initialization voltage line configuredto transmit an initialization voltage to a driving gate electrodeelectrically coupled to the first storage capacitor plate of a drivingthin-film transistor and is electrically coupled to the sourceelectrode, wherein the gate electrode includes a first gate electrodeand a second gate electrode, and one of the first gate electrode and thesecond gate electrode is at least partially between the data line and acomponent between the first gate electrode and the second gate electrodeof the thin-film transistor.

The one of the first gate electrode and the second gate electrode mayextend below or above the data line.

According to some embodiments of the present invention, a displayapparatus includes: a thin-film transistor including a source electrode,a drain electrode, and a gate electrode; a control signal line in alayer different from the source electrode, the drain electrode, and thegate electrode, and wherein the control signal line is configured totransmit a control signal; and a shield layer between the control signalline and a component of the thin-film transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIG. 1 is a circuit diagram of a (sub) pixel of an organiclight-emitting display apparatus, according to an embodiment of thepresent invention;

FIG. 2 is a schematic diagram showing locations of a plurality ofthin-film transistors (TFTs) and a capacitor in the (sub) pixel of FIG.1, according to an embodiment of the present invention;

FIGS. 3 through 6 are schematic diagrams showing components of theplurality of TFTs and the capacitor of FIG. 2 by each layer;

FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 2;

FIG. 8 is a cross-sectional view of an organic light-emitting displayapparatus according to some embodiments of the present invention;

FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 2;

FIG. 10 is a cross-sectional view taken along the line X-X of FIG. 2;

FIG. 11 is a schematic diagram showing locations of a plurality of TFTsand a capacitor in a (sub) pixel of an organic light-emitting displayapparatus, according to another embodiment of the present invention; and

FIG. 12 is a cross-sectional view taken along the line XII-XII of FIG.11.

DETAILED DESCRIPTION

Aspects and features of one or more embodiments of the present inventionand methods of accomplishing the same may be understood more readily byreference to the following detailed description of the embodiments andthe accompanying drawings. In this regard, the present embodiments mayhave different forms and should not be construed as being limited to thedescriptions set forth herein. Rather, these embodiments are provided sothat this disclosure will be more thorough and complete and will morefully convey the concepts of the present embodiments to one of ordinaryskill in the art, and the present invention will only be defined by theappended claims and their equivalents.

Hereinafter, one or more embodiments of the present invention will bedescribed below in more detail with reference to the accompanyingdrawings. Those components that are the same or are in correspondenceare rendered the same reference numeral regardless of the figure number,and redundant explanations are omitted.

It will be understood that when a layer, region, or component isreferred to as being “formed on,” another layer, region, or component,it can be directly or indirectly formed on the other layer, region, orcomponent. That is, for example, intervening layers, regions, orcomponents may be present. Sizes of elements in the drawings may beexaggerated for convenience of explanation. In other words, since sizesand thicknesses of components in the drawings are arbitrarilyillustrated for convenience of explanation, the following embodimentsare not limited thereto.

In the following examples, the x-axis, the y-axis and the z-axis are notlimited to three axes of the rectangular coordinate system, and may beinterpreted in a broader sense. For example, the x-axis, the y-axis, andthe z-axis may be perpendicular to one another, or may representdifferent directions that are not perpendicular to one another.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

FIG. 1 is an equivalent circuit diagram of a (sub) pixel of an organiclight-emitting display apparatus, according to some embodiments of thepresent invention.

As shown in FIG. 1, the (sub) pixel of the organic light-emittingdisplay apparatus according to an embodiment includes a plurality ofsignal lines, a plurality of thin-film transistors (TFTs) coupled to theplurality of signal lines, a storage capacitor Cst, and an organiclight-emitting device OLED. Here, the plurality of signal lines may beshared by a plurality of (sub) pixels.

The plurality of TFTs include a driving TFT T1, a switching TFT T2, acompensating TFT T3, an initialization TFT T4, an operation control TFTT5, and an emission control TFT T6.

The plurality of signal lines include a scan line 121 transmitting ascan signal Sn, a previous scan line 122 transmitting a previous scanline Sn−1 to the initialization TFT T4, an emission control line 123transmitting an emission control signal En to the operation control TFTT5 and the emission control TFT T6, a data line 171 crossing the scanline 121 and transmitting a data signal Dm, a driving voltage line 172transmitting a driving voltage ELVDD and disposed almost in parallel tothe data line 171, and an initialization voltage line 124 transmittingan initialization voltage Vint for initializing the driving TFT T1.

A gate electrode G1 of the driving TFT T1 is coupled to a first storagecapacitor plate Cst1 of the storage capacitor Cst, a source electrode S1of the driving TFT T1 is coupled to the driving voltage line 172 throughthe operation control TFT T5, and a drain electrode D1 of the drivingTFT T1 is electrically coupled to a pixel electrode of the organiclight-emitting device OLED through the emission control TFT T6.According to a switching operation of the switching TFT T2, the drivingTFT T1 receives the data signal Dm and supplies a driving currentI_(OLED) to the organic light-emitting device OLED.

A gate electrode G2 of the switching TFT T2 is coupled to the scan line121, a source electrode S2 of the switching TFT T2 is coupled to thedata line 171, and a drain electrode D2 of the switching TFT T2 iscoupled to the source electrode S1 of the driving TFT T1 and coupled tothe driving voltage line 172 through the operation control TFT T5. Sucha switching TFT T2 is turned on according to the scan signal Sn receivedthrough the scan line 121, and performs a switching operation bytransmitting the data signal Dm from the data line 171 to the sourceelectrode S1 of the driving TFT T1.

A gate electrode G3 of the compensation TFT T3 is coupled to the scanline 121, a source electrode S3 of the compensating TFT T3 is coupled tothe drain electrode D1 of the driving TFT T1 while being coupled to thepixel electrode of the organic light-emitting device OLED through theemission control TFT T6, and a drain electrode D3 of the compensatingTFT T3 is coupled to the first storage capacitor plate Cst1 of thestorage capacitor Cst, a drain electrode D4 of the initialization TFTT4, and the gate electrode G1 of the driving TFT T1. Such a compensatingTFT T3 is turned on according to the scan signal Sn received through thescan line 121, and diode-connects the driving TFT T1 by electricallycoupling the gate electrode G1 and the drain electrode D1 of the drivingTFT T1.

A gate electrode G4 of the initialization TFT T4 is coupled to theprevious scan line 122, a source electrode S4 of the initialization TFTT4 is coupled to the initialization voltage line 124, and the drainelectrode D4 of the initialization TFT T4 is coupled to the firststorage capacitor plate Cst1 of the storage capacitor Cst, the drainelectrode D3 of the compensating TFT T3, and the gate electrode G1 ofthe driving TFT T1. The initialization TFT T4 is turned on according tothe previous scan signal Sn−1 received through the previous scan line122, and performs an initialization operation by initializing a voltageof the gate electrode G1 of the driving TFT T1 by transmitting theinitialization voltage Vint to the gate electrode G1 of the driving TFTT1.

A gate electrode G5 of the operation control TFT T5 is coupled to theemission control line 123, a source electrode S5 of the operationcontrol TFT T5 is coupled to the driving voltage line 172, and a drainelectrode D5 of the operation control TFT T5 is coupled to the sourceelectrode S1 of the driving TFT T1 and the drain electrode D2 of theswitching TFT T2.

A gate electrode G6 of the emission control TFT T6 is coupled to theemission control line 123, a source electrode S6 of the emission controlTFT T6 is coupled to the drain electrode D1 of the driving TFT T1 andthe source electrode S3 of the compensating TFT T3, and a drainelectrode D6 of the emission control TFT T6 is electrically coupled tothe pixel electrode of the organic light-emitting device OLED. Theoperation control TFT T5 and an emission control TFT T6 are concurrently(e.g., simultaneously) turned on according to the emission controlsignal En received through the emission control line 123, and transmitthe driving voltage ELVDD to the organic light-emitting device OLED suchthat the driving current I_(OLED) flows through the organiclight-emitting device OLED.

A second storage capacitor plate Cst2 of the storage capacitor Cst iscoupled to the driving voltage line 172, and a counter electrode of theorganic light-emitting device OLED is coupled to a common voltage ELVSS.Accordingly, the organic light-emitting device OLED emits light byreceiving the driving current I_(OLED) from the driving TFT T1, therebydisplaying an image.

Detailed operations of a pixel in such an organic light-emitting displayapparatus will now be briefly described.

First, the previous scan signal Sn−1 in a low level is supplied throughthe previous can line 122 during an initialization period. Then, theinitialization TFT T4 is turned on in response to the previous scansignal Sn−1 in the low level, and thus the initialization voltage Vintis transmitted to the gate electrode G1 of the driving TFT T1 from theinitialization voltage line 124 through the initialization TFT T4, andthe driving TFT T1 is initialized by the initialization voltage Vint.

Then, the scan signal Sn in a low level is supplied through the scanline 121 during a data programming period. Accordingly, the switchingTFT T1 and the compensating TFT T3 are turned on in response to the scansignal Sn in the low level. Thus, the driving TFT T1 is diode-coupled bythe turned on compensating TFT T3 and is biased in a forward direction.Then, a compensating voltage (Dm+Vth, wherein Vth has a negative value)obtained by subtracting a threshold voltage Vth of the driving TFT T1from the data signal Dm supplied from the data line 171 is applied tothe gate electrode G1. Next, the driving voltage ELVDD and thecompensating voltage are applied to two ends of the storage capacitorCst, and thus a charge corresponding to a voltage difference between thetwo ends is stored in the storage capacitor Cst.

Then, the emission control signal En supplied from the emission controlline 123 during an emission period is changed from a high level to a lowlevel. Accordingly, the operation control TFT T5 and the emissioncontrol TFT T6 are turned on according to the emission control signal Enin the low level during the emission period. Then, the driving currentI_(OLED) determined based on a voltage difference between a voltage ofthe gate electrode G1 of the driving TFT T1 and the driving voltageELVDD is generated, and the driving current I_(OLED) is supplied to theorganic light-emitting device OLED through the emission control TFT T6.A gate-source voltage V_(GS) of the driving TFT T1 maintains‘(Dm+Vth)-ELVDD’ by the storage capacitor Cst during the emissionperiod, and because the driving current I_(OLED) is proportional to‘(Dm-ELVDD)²’ (i.e., a square of a value obtained by subtracting thethreshold voltage Vth from the gate-source voltage V_(GS), according toa current-voltage relationship of the driving TFT T1), the drivingcurrent I_(OLED) may be determined regardless of the threshold voltageVth of the driving TFT T1.

A more detailed structure of the (sub) pixel of the organiclight-emitting display apparatus of FIG. 1 will now be described withreference to FIGS. 2 through 10.

FIG. 2 is a schematic diagram showing locations of the plurality of TFTsand the capacitor in the (sub) pixel of FIG. 1, according to anembodiment of the present invention. FIGS. 3 through 6 are schematicdiagrams showing components of the plurality of TFTs and the capacitorof FIG. 2 by each layer. In other words, each of FIGS. 3 through 6illustrates an arrangement of a wire or a semiconductor layer disposedin the same layer, and an insulating layer may be located between layersshown in FIGS. 3 through 6. For example, a first insulating layer 141 ofFIG. 7 may be located between the layer of FIG. 3 and the layer of FIG.4, a second insulating layer 142 of FIG. 7 may be located between thelayer of FIG. 4 and the layer of FIG. 5, and an interlayer insulatinglayer 160 of FIG. 7 may be located between the layer of FIG. 5 and thelayer of FIG. 6. Here, contact holes etc. may be formed on suchinsulating layers so that the layers of FIGS. 3 through 6 areelectrically coupled to each other.

The (sub) pixel of the organic light-emitting display apparatus,according to the current embodiment, includes the scan line 121, theprevious scan line 122, the emission control line 123, and theinitialization voltage line 124, which respectively apply the scansignal Sn, the previous scan signal Sn−1, the emission control signalEn, and the initialization voltage Vint and are formed along a rowdirection. Also, the (sub) pixel of the organic light-emitting displayapparatus, according to the current embodiment, may include the dataline 171 and the driving voltage line 172, which cross the scan line121, the previous scan line 122, the emission control line 123, and theinitialization voltage line 124, and respectively apply the data signalDm and the driving voltage ELVDD to the (sub) pixel.

Also, the (sub) pixel may include the driving TFT T1, the switching TFTT2, the compensating TFT T3, the initialization TFT T4, the operationcontrol TFT T5, the emission control TFT T6, the storage capacitor Cst,and an organic light-emitting device.

The driving TFT T1, the switching TFT T2, the compensating TFT T3, theinitialization TFT T4, the operation control TFT T5, and the emissioncontrol TFT T6 are formed on a semiconductor layer as shown in FIG. 3,wherein the semiconductor layer may have a shape curving or contouringin any shape. The semiconductor layer may include a drivingsemiconductor layer 131 a corresponding to the driving TFT T1, aswitching semiconductor layer 131 b corresponding to the switching TFTT2, a compensating semiconductor layer 131 c 1, 131 c 2, and 131 c 3corresponding to the compensating TFT T3, initialization semiconductorlayer 131 d 1, 131 d 2, and 131 d 3 corresponding to the initializationTFT T4, an operation control semiconductor layer 131 e corresponding tothe operation control TFT T5, and an emission control semiconductorlayer 131 f corresponding to the emission control TFT T6. In otherwords, the driving semiconductor layer 131 a, the switchingsemiconductor layer 131 b, the compensating semiconductor layer 131 c 1,131 c 2, and 131 c 3, the initialization semiconductor layer 131 d 1through 131 d 3, the operation control semiconductor layer 131 e, andthe emission control semiconductor layer 131 f may be understood toconstitute partial regions of the semiconductor layer of FIG. 3.

The semiconductor layer may include polysilicon. Also, the semiconductorlayer may include, for example, a channel region that is not doped withan impurity, and source and drain regions that are formed as impuritiesare doped on two sides of the channel region. Here, the impurities mayvary according to a type of a TFT, and may be N-type impurities orP-type impurities. Also, the source or drain region may be interpretedas a source or drain electrode of a TFT. In other words, for example, adriving source electrode 176 a may correspond to a driving drain regiondoped with an impurity near the driving semiconductor layer 131 a of thesemiconductor layer of FIG. 3, and a driving drain electrode 177 a maycorrespond to a driving drain region doped with an impurity near thedriving semiconductor layer 131 a of the semiconductor layer of FIG. 3.Also, a region of the semiconductor layer of FIG. 3 between TFTs may bedoped with an impurity to operate as a wire electrically coupling theTFTs.

Meanwhile, the storage capacitor Cst may be formed. The storagecapacitor Cst may include a first storage capacitor plate 125 a and asecond storage capacitor plate 127, wherein the second insulating layer142 is located therebetween. Here, the first storage capacitor plate 125a may also operate as a driving gate electrode of the driving TFT T1. Inother words, the driving gate electrode and the first storage capacitorplate 125 a may be integrally formed. Hereinafter, for convenience, thesame reference numeral as the first storage capacitor plate 125 a may beused for the driving gate electrode.

The first storage capacitor plate 125 a may have a rectangular shapeisolated from an adjacent (sub) pixel as shown in FIG. 4. Such a firststorage capacitor plate 125 a may be formed in the same layer and of thesame material as the scan line 121, the previous scan line 122, and theemission control line 123 as shown in FIG. 4.

For reference, a switching gate electrode 125 b and a compensating gateelectrode 125 c 1 and 125 c 2 may be a part of the scan line 121crossing the semiconductor layer or a part protruding from the scan line121, an initialization gate electrode 125 d 1 and 125 d 2 may be partsof the previous scan line 122 crossing the semiconductor layer or partsprotruding from the previous scan line 122, and an operation controlgate electrode 125 e and an emission control gate electrode 125 f may beparts of the emission control line 123 crossing the semiconductor layeror parts protruding from the emission control line 123.

The second storage capacitor plates 127 of adjacent (sub) pixels may becoupled to each other, and as shown in FIG. 5, may be formed in the samelayer and of the same material as the initialization voltage line 124. Astorage opening 27 may be formed on the second storage capacitor plate127 and may enable the first storage capacitor plate 125 a and acompensating drain electrode 177 c of the compensating TFT T3 to beelectrically coupled to each other through a connecting unit 174described in more detail later. The second storage capacitor plate 127may be coupled to the driving voltage line 172 through a contact hole168 formed on the interlayer insulating layer 160.

The driving TFT T1 includes the driving semiconductor layer 131 a, thedriving gate electrode 125 a, the driving source electrode 176 a, andthe driving drain electrode 177 a. As described above, the driving gateelectrode 125 a may also operate as the first storage capacitor plate125 a. The driving source electrode 176 a is an external region (in −xdirection in FIG. 3) of the driving gate electrode 125 a, and thedriving drain electrode 177 a is an external region (in +x direction inFIG. 3) of the driving gate electrode 125 a and is arranged opposite tothe driving source electrode 176 a based on the driving gate electrode125 a.

The switching TFT T2 includes the switching semiconductor layer 131 b,the switching gate electrode 125 b, a switching source electrode 176 b,and a switching drain electrode 177 b. The switching source electrode176 b may be electrically coupled to the data line 171 through a contacthole 164 formed through the first insulating layer 141, the secondinsulating layer 142, and the interlayer insulating layer 160. Here, ifrequired, a part near the contact hole 164 of the data line 171 may beunderstood to be the source electrode S2 of the switching TFT T2. Theswitching drain electrode 177 b corresponds to a switching drain regiondoped with an impurity near the switching semiconductor layer 131 b.

The compensating TFT T3 includes the compensating semiconductor layer131 c 1, 131 c 2, and 131 c 3, the compensating gate electrode 125 c 1and 125 c 2, a compensating source electrode 176 c, and the compensatingdrain electrode 177 c. The compensating source electrode 176 ccorresponds to a compensating source region doped with an impurity nearthe compensating semiconductor layer, and the compensating drainelectrode 177 c corresponds to a compensating drain region doped with animpurity near the compensating semiconductor layer. The compensatinggate electrode 125 c 1 and 125 c 2 is a dual gate electrode including afirst gate electrode 125 c 1 and a second gate electrode 125 c 2, andmay prevent or reduce generation of a leakage current. The compensatingdrain electrode 177 c of the compensating TFT T3 may be coupled to thefirst storage capacitor plate 125 a through the connecting unit 174. Thecompensating semiconductor layer may include a part or component 131 c 1corresponding to the first gate electrode 125 c 1, a part or component131 c 3 corresponding to the second gate electrode 125 c 2, and a partor component 131 c 2 between the parts 131 c 1 and 131 c 3.

As shown in FIG. 6, the connecting unit 174 may be formed of the samematerial and in the same layer as the data line 171. One end of theconnecting unit 174 is coupled to the compensating drain electrode 177 cand an initialization drain electrode 177 d through a contact hole 166formed through the first insulating layer 141, the second insulatinglayer 142, and the interlayer insulating layer 160, and the other end ofthe connecting unit 174 is coupled to the first storage capacitor plate125 a through a contact hole 167 formed through the second insulatinglayer 142 and the interlayer insulating layer 160. Here, the other endof the connecting unit 174 is coupled to the first storage capacitorplate 125 a through the storage opening 27 formed on the second storagecapacitor plate 127.

The initialization TFT T4 includes an initialization semiconductor layer131 d 1, 131 d 2, and 131 d 3, an initialization gate electrode 125 d 1and 125 d 2, an initialization source electrode 176 d, and theinitialization drain electrode 177 d. The initialization drain electrode177 d corresponds to an initialization drain region doped with animpurity near the initialization semiconductor layer 131 d 1, 131 d 2,and 131 d 3.

The initialization source electrode 176 d is coupled to theinitialization voltage line 124 through an initialization connectingline 78. One end of the initialization connecting line 78 may be coupledto the initialization voltage line 124 through a contact hole 161 formedthrough the second insulating layer 142 and the interlayer insulatinglayer 160, and the other end of the initialization connecting line 78may be coupled to the initialization source electrode 176 d through acontact hole 162 formed through the first insulating layer 141, thesecond insulating layer 142, and the interlayer insulating layer 160.

The operation control TFT T5 includes the operation controlsemiconductor layer 131 e, the operation control gate electrode 125 e,an operation control source electrode 176 e, and an operation controldrain electrode 177 e. The operation control source electrode 176 e maybe electrically coupled to the driving voltage line 172 through acontact hole 165 formed through the first insulating layer 141, thesecond insulating layer 142, and the interlayer insulating layer 160.Here, if required, a part near the contact hole 165 of the drivingvoltage line 172 may be understood to be the source electrode S5 of theoperation control TFT T5. The operation control drain electrode 177 ecorresponds to an operation control drain region doped with an impuritynear the operation control semiconductor layer 131 e.

The emission control TFT T6 includes the emission control semiconductorlayer 131 f, the emission control gate electrode 125 f, an emissioncontrol source electrode 176 f, and an emission control drain electrode177 f. The emission control source electrode 176 f corresponds to anemission control source region doped with an impurity near the emissioncontrol semiconductor layer 131 f. As shown in FIG. 6, the emissioncontrol drain electrode 177 f may be understood to be a part formed onthe interlayer insulating layer 160 together with the data line 171 orthe driving voltage line 172. The emission control drain electrode 177 fmay be coupled to a lower semiconductor layer through a contact hole 163formed through the first insulating layer 141, the second insulatinglayer 142, and the interlayer insulating layer 160. Alternatively, itmay be understood that a part of the lower semiconductor layer is aemission control drain electrode, and the reference numeral 177 f denotean intermediate connection layer for coupling the emission control drainelectrode and the pixel electrode of the organic light-emitting deviceOLED.

One end of the driving semiconductor layer 131 a of the driving TFT T1is coupled to the switching semiconductor layer 131 b and thecompensating semiconductor layer, and the other end of the drivingsemiconductor layer 131 a is coupled to the operation controlsemiconductor layer 131 e and the emission control semiconductor layer131 f. Accordingly, the driving source electrode 176 a is coupled to theswitching drain electrode 177 b and the operation control drainelectrode 177 e, and the driving drain electrode 177 a is coupled to thecompensating source electrode 176 c and the emission control sourceelectrode 176 f.

Meanwhile, the switching TFT T2 is used as a switching device forselecting a (sub) pixel to emit light. The switching gate electrode 125b is coupled to the scan line 121, the switching source electrode 176 bis coupled to the data line 171, and the switching drain electrode 177 bis coupled to the driving TFT T1 and the operation control TFT T5.

Also, as shown in FIG. 6, the emission control drain electrode 177 f ofthe emission control TFT T6 is coupled to the pixel electrode of theorganic light-emitting device OLED through a contact hole 181 formed ona passivation film or planarization film covering the data line 171 orthe driving voltage line 172 formed in the same layer.

FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 2.As shown in FIG. 7, various components described above may be arrangedon a substrate 110. The substrate 110 may be formed of any one ofvarious suitable substrate materials, such as glass, a metal, andplastic. A buffer layer 111 may be disposed on the substrate 110 asoccasion demands. The buffer layer 111 may flatten a surface of thesubstrate 110 or prevent impurities from penetrating into asemiconductor layer on the substrate 110. Such a buffer layer 111 may bea single layer or multilayer structure formed of silicon oxide, siliconnitride, or silicon oxynitride.

The driving semiconductor layer 131 a, the switching semiconductor layer131 b, and the compensating semiconductor layer described above withreference to FIG. 3 may be arranged on the buffer layer 111. The firstinsulating layer 141 formed of silicon nitride, silicon oxide, orsilicon oxynitride may be arranged on the driving semiconductor layer131 a, the switching semiconductor layer 131 b, and the compensatingsemiconductor layer.

Wires including the driving gate electrode 125 a, the scan line 121including the switching gate electrode 125 b and the compensating gateelectrode 125 c 1 and 125 c 2, the previous scan line 122 including theinitialization gate electrode 125 d 1 and 125 d 2, the emission controlline 123 including the operation control gate electrode 125 e and theemission control gate electrode 125 f, which have been described abovewith reference to FIG. 4, may be arranged on the first insulating layer141. The driving gate electrode 125 a, the scan line 121, the previousscan line 122, and the emission control line 123 may be collectivelyreferred to as a first gate wire.

The second insulating layer 142 may cover the first gate wire. Thesecond insulating layer 142 may be formed of silicon nitride, siliconoxide, or silicon oxynitride. The second storage capacitor plate 127 andthe initialization voltage line 124 described above with reference toFIG. 5 may be arranged on the second insulating layer 142. The secondstorage capacitor plate 127 and the initialization voltage line 124 maybe collectively referred to as a second gate wire.

The interlayer insulating layer 160 is disposed on the second gate wire.The interlayer insulating layer 160 may be formed of silicon nitride,silicon oxide, or silicon oxynitride.

The data line 171, the driving voltage line 172, the connecting unit174, the initialization connecting line 78, and the emission controldrain electrode 177 f, which have been described above with reference toFIG. 6, may be arranged on the interlayer insulating layer 160. The dataline 171, the driving voltage line 172, the connecting unit 174, theinitialization connecting line 78, and the emission control drainelectrode 177 f may be collectively referred to as a data wire. Asdescribed above, the data line 171, the driving voltage line 172, theconnecting unit 174, the initialization connecting line 78, and theemission control drain electrode 177 f may be electrically coupled to alower semiconductor layer or an electrode through the contact holes 161through 168 formed on at least a part of the first insulating layer 141,the second insulating layer 142, and the interlayer insulating layer160.

A passivation film or planarization film is disposed on the data wire,and a pixel electrode of an organic light-emitting device may bearranged on the passivation film or planarization film. The pixelelectrode may be coupled to the emission control drain electrode 177 fthrough the contact hole 181 formed on the passivation film orplanarization film.

Meanwhile, as shown in FIGS. 2, 5, and 7, the second storage capacitorplate 127 may include a first shield layer SD1 at one side. As shown inFIGS. 2 and 5, the first shield layer SD1 may be a part protruding fromthe second storage capacitor plate 127. The first shield layer SD1 maybe understood as a part of the second storage capacitor plate 127, whichextends between the data line 171 and at least a part between the firstgate electrode 125 c 1 and the second gate electrode 125 c 2 of thecompensating TFT T3.

For reference, FIG. 2 is a diagram of one (sub) pixel, and a (sub) pixelhaving the same or similar structure may be disposed top, bottom, left,and right of the (sub) pixel. In FIG. 7, a (sub) pixel P1 corresponds tothe (sub) pixel of FIG. 2, and a part of a (sub) pixel P2 disposed nextto the (sub) pixel P1 in the +x direction of FIG. 2 are illustrated. The(sub) pixel P2 may also include the data line 171, and accordingly, thefirst shield layer SD1 of the (sub) pixel P1 may be understood to be apart of the second storage capacitor plate 127, which extends betweenthe data line 171 of the (sub) pixel P2 and at least a part between thefirst and second gate electrodes 125 c 1 and 125 c 2 of the compensatingTFT T3.

If the first shield layer SD1 does not exist, the components between thefirst and second gate electrodes 125 c 1 and 125 c 2 of the compensatingTFT T3, for example, the part 131 c 2 of the compensating semiconductorlayer, may be affected by the data line 171.

The data line 171 transmits a data signal to the (sub) pixel P2 disposednear the (sub) pixel P1 in the +x direction, and also transmits a datasignal to a plurality of (sub) pixels disposed near the (sub) pixel P2in +y and −y directions. Here, a data signal being transmitted may varyaccording to luminance to be realized in the plurality of (sub) pixelsdisposed near the (sub) pixel P2 in the +y and −y directions, andaccordingly, the data line 171 near the part 131 c 2 of the compensatingsemiconductor layer of the (sub) pixel P1 may transmit differentelectric signals according to time while the (sub) pixel P1 emits light.

If the first shield layer SD1 does not exist, parasitic capacitance mayoccur between the data line 171 of the (sub) pixel P2 and the part 131 c2 of the compensating TFT T3 of the (sub) pixel P1, and accordingly, theelectric potential of the part 131 c 2 of the compensating TFT T3 of the(sub) pixel P1 may be affected by different electric signals transmittedby the data line 171 of the (sub) pixel P2 according to time while the(sub) pixel P1 emits light. Because the compensating TFT T3 iselectrically coupled to the driving TFT T1, if the electric potential ofthe part 131 c 2 of the compensating TFT T3 of the (sub) pixel P1 isaffected by the different electric signals transmitted by the data line171 of the (sub) pixel P2, the luminance of the organic light-emittingdevice OLED determined by the driving TFT T1 may become different froman initial intension, and thus quality of an image displayed by theorganic light-emitting display apparatus may deteriorate.

However, according to the organic light-emitting display apparatus ofsome embodiments, because the first shield layer SD1 is disposed betweenthe data line 171 of the (sub) pixel P2 and the part 131 c 2 of thecompensating TFT T3 of the (sub) pixel P1, the part 131 c 2 of thecompensating TFT T3 of the (sub) pixel P1 may not be affected or may beless affected by the data line 171 of the (sub) pixel P2, and thus theorganic light-emitting display apparatus may be able to display an imagehaving a more accurate luminance and a relatively higher quality. Forexample, if the first shield layer SD1 is a part of the second storagecapacitor plate 127, the second storage capacitor plate 127 is connectedto the driving voltage line 172 always having uniform electricpotential, through the contact hole 168, and thus the first shield layerSD1 may also always have a uniform electric potential. Accordingly, aneffect of an adjacent electric signal on the part 131 c 2 of thecompensating TFT T3 may be reduced.

Alternatively, the first shield layer SD1 may extend below the data line171 of the (sub) pixel P2 as shown in FIG. 8 that is a cross-sectionalview of an organic light-emitting display apparatus according to someembodiments of the present invention. Accordingly, the part 131 c 2 ofthe compensating TFT T3 may be further shielded. Here, the part 131 c 2of the compensating TFT T3 may also be further shielded by extending thefirst shield layer SD1 above at least a part of the part 131 c 2 betweenthe first and second gate electrodes 125 c 1 and 125 c 2 of thecompensating TFT T3.

FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 2.As shown in FIGS. 2, 5, and 9, the initialization voltage line 124 mayinclude a second shield layer SD2.

As shown in FIGS. 2 and 5, the second shield layer SD2 may be a part ofthe initialization voltage line 124, which extends along an x-axis. Thesecond shield layer SD2 may be understood to be a part of theinitialization voltage line 124, which extends between the data line 171and at least a part between first gate electrode 125 d 1 and a secondgate electrode 125 d 2 of the initialization gate electrode 125 d 1 and125 d 2 of the initialization TFT T4.

In FIGS. 2 and 5, the initialization voltage line 124 extends above thepart between the first and second gate electrodes 125 d 1 and 125 d 2 ofthe initialization TFT T4, but an embodiment is not limited thereto. Ifthe initialization voltage line 124 has another location or anothershape, for example, is moved in a +y direction, a −y direction, oranother direction, or is curved, the initialization voltage line 124 mayhave a protrusion and the protrusion may extend between the data line171 and at least a part between the first and second gate electrodes 125d 1 and 125 d 2 of the initialization TFT T4 to operate as the secondshield layer SD2. In other words, in FIGS. 2 and 5, the initializationvoltage line 124 may extend along an x-axis direction while passingbetween the data line 171 and at least the part between the first andsecond gate electrodes 125 d 1 and 125 d 2 of the initialization TFT T4,such that a location of the initialization voltage line 124 is specifiedwithout having to include the protrusion.

If the second shield layer SD2 does not exist, the components betweenthe first and second gate electrodes 125 d 1 and 125 d 2 of theinitialization TFT T4, for example, a part 131 d 2 of the initializationsemiconductor layer 131 d 1,131 d 2, and 131 d 3 may be affected by thedata line 171.

The data line 171 transmits a data signal to the (sub) pixel of FIG. 2,and also transmits a data signal to a plurality of (sub) pixels disposednear the (sub) pixel of FIG. 2 in +y and −y directions. Here, a datasignal being transmitted may vary according to luminance to be realizedby the plurality of (sub) pixels disposed near the (sub) pixel of FIG. 2in the +y and −y directions, and accordingly, the data line 171 near thepart 131 d 2 of the initialization semiconductor layer 131 d 1, 131 d 2,and 131 d 3 of the (sub) pixel of FIG. 2 transmits different electricsignals according to time while the (sub) pixel of FIG. 2 emits light.

If the second shield layer SD2 does not exist, parasitic capacitance mayoccur between the data line 171 and the part 131 d 2 of theinitialization semiconductor layer 131 d 1, 131 d 2, and 131 d 3 of theinitialization TFT T4, and thus electric potential of the part 131 d 2of the initialization semiconductor layer 131 d 1, 131 d 2, and 131 d 3of the initialization TFT T4 may be affected by the different electricsignals transmitted by the data line 171, according to time while the(sub) pixel of FIG. 2 emits light. Because the initialization TFT T4 iselectrically coupled to the driving TFT T1, if the electric potential ofthe part 131 d 2 of the initialization semiconductor layer 131 d 1, 131d 2, and 131 d 3 of the initialization TFT 4 is affected by thedifferent electric signals transmitted by the data line 171, theluminance of the organic light-emitting device OLED determined by thedriving TFT T1 may become different from an initial intention, and thusquality of an image displayed by the organic light-emitting displayapparatus may deteriorate.

However, according to the organic light-emitting display apparatus ofsome embodiments, because the second shield layer SD2 is arrangedbetween the data line 171 and the part 131 d 2 of the initializationsemiconductor layer 131 d 1, 131 d 2, and 131 d 3 of the initializationTFT T4, the part 131 d 2 of the initialization semiconductor layer 131 d1, 131 d 2, and 131 d 3 of the initialization TFT T4 may not be affectedor may be less affected by the data line 171, and thus the organiclight-emitting display apparatus may be able to display an image havinga more accurate luminance and a relatively higher quality. For example,if the second shield layer SD2 is a part of the initialization voltageline 124, the second shield layer SD2 may always have a uniform electricpotential by the initialization voltage line 124 that always has uniformelectric potential. Accordingly, an effect of an adjacent electricsignal on the part 131 d 2 of the initialization semiconductor layer 131d 1, 131 d 2, and 131 d 3 of the initialization TFT T4 may be reduced.

Here, if a layout of various wires or a semiconductor layer differs fromthat shown in FIG. 2, the second shield layer SD2 may be a partextending at least above the part 131 d 2 of the initializationsemiconductor layer 131 d 1, 131 d 2, and 131 d 3 between the first andsecond gate electrodes 125 d 1 and 125 d 2 of the initialization TFT T4,or a part extending below the data line 171.

FIG. 10 is a cross-sectional view taken along the line X-X of FIG. 2. Asshown in FIGS. 2, 5, and 10, the second storage capacitor plate 127 mayinclude a third shield layer SD3.

As shown in FIGS. 2 and 5, the third shield layer SD3 may be a part ofthe second storage capacitor plate 127. The third shield layer SD3 maybe understood to be a part of the second storage capacitor plate 127,which extends between the data line 171 and the driving gate electrode125 a of the driving TFT T1. For example, the second storage capacitorplate 127 may have a (virtual) end in the −x direction, whichapproximately match an end of the first storage capacitor plate 125 a inthe −x direction below the second storage capacitor plate 127, and thethird shield layer SD3 may exist between the data line 171 and thedriving gate electrode 125 a of the driving TFT T1 in the −x directionfrom the (virtual) end, wherein the third shield layer SD3 may beunderstood to be integrally formed with the second storage capacitorplate 127.

Alternatively, unlike shown in FIGS. 2 and 5, the second storagecapacitor plate 127 may not extend in the −x direction where the dataline 171 is located due to nonexistence of the third shield layer SD3,and the end of the second storage capacitor plate 127 in the −xdirection may approximately match the end of the first storage capacitorplate 125 a in the −x direction. In this case, the driving gateelectrode 125 a of the driving TFT T1 is affected by the data line 171.

The data line 171 transmits a data signal to the (sub) pixel of FIG. 2,and also transmits a data signal to the plurality of (sub) pixelsdisposed in the +y and −y directions of the (sub) pixel. Here, the datasignal being transmitted may vary according to the luminance to berealized by the plurality of (sub) pixels disposed in the +y and −ydirections of the (sub) pixel of FIG. 2, and accordingly, the data line171 near the part 131 d 2 of the initialization semiconductor layer 131d 1, 131 d 2, and 131 d 3 of the (sub) pixel of FIG. 2 may transmitdifferent electric signals according to time while the (sub) pixel ofFIG. 2 emits light.

If the third shield layer SD3 does not exist and thus the second storagecapacitor plate 127 does not extend in the −x direction where the dataline 171 is disposed and the end of the second storage capacitor plate127 in the −x direction approximately matches the end of the firststorage capacitor plate 125 a in the −x direction, parasitic capacitanceexists between the data line 171 and the driving gate electrode 125 a ofthe driving TFT T1, and accordingly, electric potential of the drivinggate electrode 125 a of the driving TFT T1 is affected by the differentelectric signals transmitted by the data line 171 according to timewhile the (sub) pixel of FIG. 2 emits light. As a result, the luminanceof the organic light-emitting device OLED determined by the driving TFTT1 may become different from an initial intension, and thus quality ofan image displayed by the organic light-emitting display apparatus maydeteriorate.

However, according to the organic light-emitting display apparatus ofthe current embodiment, because the third shield layer SD3 existsbetween the data line 171 and the driving gate electrode 125 a of thedriving TFT T1, the driving gate electrode 125 a of the driving TFT T1may not be affected or may be less affected by the data line 171, andthus the organic light-emitting display apparatus may be able to displayan image having a more accurate luminance and a relatively higherquality. For example, if the third shield layer SD3 is a part of thesecond storage capacitor plate 127, the second storage capacitor plate127 is coupled to the driving voltage line 172 always having uniformelectric potential, through the contact hole 168, and thus the thirdshield layer SD3 may also always have a uniform electric potential.Accordingly, an effect of an adjacent electric signal on the drivinggate electrode 125 a of the driving TFT T1 may be reduced.

Of course, the third shield layer SD3 may not only be disposed betweenthe data line 171 and the driving gate electrode 125 a, and may alsoextend below the data line 171 as shown in FIG. 10. Accordingly, thedriving gate electrode 125 a of the driving TFT T1 may be furthershielded.

Hereinabove, the organic light-emitting display apparatus may includethe first shield layer SD1, the second shield layer SD2, and the thirdshield layer SD3, but alternatively, the organic light-emitting displayapparatus may include only some of the first through third shield layersSD1 through SD3. In other words, the organic light-emitting displayapparatus may include at least any one of the first through third shieldlayers SD1 through SD3.

In the above embodiments, the compensating TFT T3 and the initializationTFT T4 include a dual gate electrode. However, an embodiment is notlimited thereto and the organic light-emitting display apparatus mayinclude the first or second shield layer SD1 or SD2 disposed between thedata line 171 and a part of the compensating TFT T3 and/or theinitialization TFT T4, even if the compensating TFT T3 and theinitialization TFT T4 include a single gate electrode.

Meanwhile, all of the first through third shield layers SD1 through SD3are included in the second gate wire as shown in FIGS. 2 and 5, but anembodiment is not limited thereto. In other words, the first throughthird shield layers SD1 through SD3 may be a part of the second storagecapacitor plate 127 or a part of the initialization voltage line 124.

FIG. 11 is a schematic diagram showing locations of a plurality of TFTsand a capacitor in a (sub) pixel of an organic light-emitting displayapparatus, according to another embodiment of the present invention, andFIG. 12 is a cross-sectional view taken along the line XII-XII of FIG.11. Differences between the organic light-emitting display apparatusesof FIGS. 2 and 11 are shapes of the previous scan lines 122, theinitialization voltage lines 124, and the initialization TFTs T4.

Referring to FIGS. 11 and 12, the initialization voltage line may bearranged in the same layer as the second storage capacitor plate 127, orin the same layer as a pixel electrode. The initialization voltage linemay be coupled to the initialization source electrode 176 d of theinitialization TFT T4 through the contact hole 162. As described abovewith reference to FIG. 2, the initialization drain electrode 177 d ofthe initialization TFT T4 is electrically coupled to the compensatingdrain electrode 177 c of the compensating TFT T3 and the driving gateelectrode 125 a of the driving TFT T1.

The previous scan line 122 that may be arranged in the same layer as thedriving gate electrode 125 a, the scan line 121, and the emissioncontrol line 123 may include two protrusions corresponding to a locationof the initialization TFT T4. Here, the two protrusions may be the firstand second gate electrodes 125 d 1 and 125 d 2 of the initialization TFTT4. At least a part of the second gate electrode 125 d 2 may be thesecond shield layer SD2.

A dual gate electrode may have two parts overlapping a semiconductorlayer. For example, referring to FIG. 11, the second gate electrode 125d 2 of the initialization TFT T4 may be a part of the previous scan line122 extending along an x-axis without having to protrude from theprevious scan line 122, and a part 125 d 2′ of the first gate electrode125 d 1 in the −x direction, which crosses a semiconductor layer nearthe initialization source electrode 176 d, may operate as a second gateelectrode. However, in this case, a part between a part of thesemiconductor layer corresponding to the part 125 d 2′ and a part of thesemiconductor layer corresponding to the first gate electrode 125 d 1 isarranged adjacent to the data line 171 and is not shielded, and thus maybe affected by the data line 171.

However, according to the organic light-emitting display apparatus ofthe some embodiments, the previous scan line 122 includes the twoprotrusions, wherein one of the protrusions operates as the first gateelectrode 125 d 1 and the other one of the protrusions protrudes formthe part 125 d 2′ of the previous can line 122 and operates as thesecond gate electrode 125 d 2. Here, the second gate electrode 125 d 2shields the part between the part of the semiconductor layercorresponding to the part 125 d 2′ and the part of the semiconductorlayer corresponding to the first gate electrode 125 d 1 from the dataline 171, and thus an unintended effect on the initialization TFT T4from the data line 171 may be effectively blocked or reduced.

According to the initialization TFT T4 having such a structure, theinitialization TFT T4 includes the first and second gate electrodes 125d 1 and 125 d 2, and one of the first and second gate electrodes 125 d 1and 125 d 2 is at least partially disposed between the data line 171 andthe semiconductor layer 131 d 2 that is a part between the sourceelectrode 176 d and the other of the first and second gate electrodes125 d 1 and 125 d 2 of the initialization TFT T4. In FIGS. 11 and 12,the second gate electrode 125 d 2 is at least partially disposed betweenthe data line 171 and the semiconductor layer 131 d 2 that is the partbetween the source electrode 176 d and the first gate electrode 125 d 1of the initialization TFT T4, and thus the semiconductor layer 131 d 2is shielded from the data line 171. In other words, the second gateelectrode 125 d 2 is shown to be the second shield layer SD2. Here, thesecond gate electrode 125 d 2 may not only be arranged between the dataline 171 and the semiconductor layer 131 d 2 as shown in FIGS. 11 and12, but may also extend below the data line 171 in the −x direction. InFIG. 12, the data line 171 is arranged above the second gate electrode125 d 2, but if the data line 171 is arranged below the semiconductorlayer 131 d 2 and the second gate electrode 125 d 2 is arranged betweenthe data line 171 and the semiconductor layer 131 d 2, the second gateelectrode 125 d 2 may extend above the data line 171.

As such, the second shield layer SD2 may be formed as the second gatewire as described above with reference to FIGS. 2, 5, and 9, but mayalternatively be formed as the first gate wire as described withreference to FIGS. 11 and 12. If the first or third shield layer SD1 orSD3 is included as well as the second shield layer SD2, the first orthird shield layer SD1 or SD3 may be formed as the first gate wire. Inthis case, the first or third shield layer SD1 or SD3 may not beelectrically coupled to the second storage capacitor plate 127, but mayhave an island shape and electrically float.

Hereinabove, it is described that the parts of the driving TFT T1, thecompensating TFT T3, and the initialization TFT T4 are shielded from thedata line 171, but an embodiment is not limited thereto. In other words,if a TFT of a (sub) pixel of an organic light-emitting display apparatusis near the data line 171, a shield layer may be disposed between thedata line 171 and at least a part of the TFT such that the organiclight-emitting display apparatus displays an image having high quality.The shield layer may be arranged at least one of between the data line171 and a source electrode of the TFT, between the data line 171 and adrain electrode of the TFT, and between the data line 171 and a gateelectrode of the TFT.

Meanwhile, hereinabove, it is described that a shield layer is arrangedbetween a data line and a part of a TFT, but an embodiment is notlimited thereto. For example, an organic light-emitting displayapparatus may include a TFT that includes a source electrode, a drainelectrode, and a gate electrode, a control signal line that is arrangedin a layer different from the source electrode, the drain electrode, andthe gate electrode and transmits a control signal, and a shield layerthat is arranged between the control signal line and at least a part ofthe TFT. Here, the control signal line may be at least any one of theplurality of signal lines described above. In other words, the controlsignal line may be the scan line 121, the previous scan line 122, theemission control line 123, the data line 171, the driving voltage line172, or the initialization voltage line 124. The shield layer may shieldthe at least the part of the TFT from the control signal line so as toblock or reduce an effect of a control signal transmitted from thecontrol signal line on the TFT.

An embodiment of the present is not limited to an organic light-emittingdisplay apparatus. An image having high quality may be displayed as longas a display apparatus including a TFT and a data line in a (sub) pixelhas a shield layer in the same or similar manner described above.

As described above, according to one or more embodiments of the presentinvention, a display apparatus capable of preventing qualitydeterioration of a displayed image may be realized.

While one or more embodiments of the present invention have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope of thepresent invention as defined by the following claims, and theirequivalents.

What is claimed is:
 1. A display apparatus comprising: a thin-filmtransistor comprising a source electrode, a drain electrode, and a gateelectrode; a data line in a layer different from the source electrode,the drain electrode, and the gate electrode, wherein the data line isconfigured to transmit a data signal; and a shield layer between thedata line and a component of the thin-film transistor.